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Home / Final Year Projects / Low power Memristor Based 7T SRAM Using MTCMOS Technique
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Low power Memristor Based 7T SRAM Using MTCMOS Technique

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SKU: PROJ5336 Categories: 2016 Projects, 2015 Projects, Final Year Projects, VLSI Tags: academic projects, Android project 2013-2014, Android project 2015-2016, Android project Abstract, Android project list, btech projects, dotnet project 2013-2014, dotnet project 2015-2016, dotnet project Abstract, dotnet project list, elysium technologies abstract, elysium technologies chennai, elysium technologies coimbatore, elysium technologies company, elysium technologies courses, elysium technologies erode, elysium technologies inpant traning, elysium technologies internship, elysium technologies jobs, elysium technologies madurai, elysium technologies mou, elysium technologies pondychery, elysium technologies projectlist, elysium technologies projects, elysium technologies ramnad, elysium technologies salem, elysium technologies software, elysium technologies tirunelveli, elysium technologies trichy, Final Year Projects, java projects 2013-2014, java projects 2015-2016, java projects Abstract, madurai software company, matlab project 2013-2014, matlab project 2015-2016, matlab project Abstract, matlab project list, mtech projects, phd research work, Php project 2013-2014, Php project 2015-2016, Php project Abstract, Php project list, Power Electronic project 2013-2014, Power Electronic project 2015-2016, Power Electronic project Abstract, Power Electronic project list, project center Bangalore, project center chennai, project center coimbatore, project center Erode, project center Hyderabad, project center Kollam, project center madurai, project center Pandicherry, project center ramnad, project center Salem, project center Tiruneveli, project center trichy, research center, Students Projects, Vlsi project 2013-2014, Vlsi project 2015-2016, Vlsi project Abstract, Vlsi project list
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Low power Memristor Based 7T SRAM Using MTCMOS Technique

Abstract— Low power Memristor Based 7T SRAM Using MTCMOS Technique. In recent years demand of low power devices is increasing and the reason behind this is scaling of CMOS technology. Due to the scaling, size of the chip decreases and number of transistor in system on chip < Final Year Projects 2016 > SOC increases and this phenomenon also apply on memories that are used in SOC. Generally the number of transistors used in chip to store data is more as compared to the number of transistors used for other function. So in future the need of low power memories is increasing and to design low power memories leakage power is attentive parameter to design low power devices because it plays a major role in increasing the total power consumption of the devices. In this paper, 7T simple SRAM and technique based 7T SRAM has been designed and parameters like total power and leakage power has been calculated.SRAM (Static Random Access Memory) is a type of memory that provide a link with CPU and designing of SRAM is very critical because it takes large part of power and area therefore to achieve low power SRAM we have designed Memristor based SRAM. Memristor is a forth missing non-linear resistor which acts as memory and it improves the power and speed. It is invented in 1971 by L. O. Chua and MTCMOS (Multi Threshold CMOS) technique is used, recently it is very famous in academia and industry. It is a power reducing technique that helps in reducing leakage power in the SRAM by turning of the inactive circuit domains. Designing and calculation of parameters of simple SRAM, Memristor based SRAM and MTCMOS based Memristor SRAM has been done with cadence virtuoso tool and that was done at 45 nm technology with the operating voltage of 0.7 volt.

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