Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology
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Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology
Abstract— Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. Although near-threshold(Vth)operation is an attractive method for energy and performance-constrained applications,it suffers from problems in terms of circuit stability, particularly,for static random access memory < Final Year Projects 2016 > SRAM cells.This brief proposes a near-Vth9T SRAM cell implemented in a 22-nm FinFET technology. The read buffer of the proposed cell ensures read stability by decoupling the stored node from the read bit-line and improves read performance using a one-transistor read path. Energy and standby power are reduced by liminating the sub-V leakage current in the read buffer.
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