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Home / Final Year Projects / Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology
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Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology

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SKU: PROJ5440 Categories: 2016 Projects, VLSI, 2015 Projects, Final Year Projects Tags: academic projects, Android project 2013-2014, Android project 2015-2016, Android project Abstract, Android project list, btech projects, dotnet project 2013-2014, dotnet project 2015-2016, dotnet project Abstract, dotnet project list, elysium technologies abstract, elysium technologies chennai, elysium technologies coimbatore, elysium technologies company, elysium technologies courses, elysium technologies erode, elysium technologies inpant traning, elysium technologies internship, elysium technologies jobs, elysium technologies madurai, elysium technologies mou, elysium technologies pondychery, elysium technologies projectlist, elysium technologies projects, elysium technologies ramnad, elysium technologies salem, elysium technologies software, elysium technologies tirunelveli, elysium technologies trichy, Final Year Projects, java projects 2013-2014, java projects 2015-2016, java projects Abstract, madurai software company, matlab project 2013-2014, matlab project 2015-2016, matlab project Abstract, matlab project list, mtech projects, phd research work, Php project 2013-2014, Php project 2015-2016, Php project Abstract, Php project list, Power Electronic project 2013-2014, Power Electronic project 2015-2016, Power Electronic project Abstract, Power Electronic project list, project center Bangalore, project center chennai, project center coimbatore, project center Erode, project center Hyderabad, project center Kollam, project center madurai, project center Pandicherry, project center ramnad, project center Salem, project center Tiruneveli, project center trichy, research center, Students Projects, Vlsi project 2013-2014, Vlsi project 2015-2016, Vlsi project Abstract, Vlsi project list
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Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology

Abstract— Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. Although near-threshold(Vth)operation is an attractive method for energy and performance-constrained applications,it suffers from problems in terms of circuit stability, particularly,for static random access memory < Final Year Projects 2016 > SRAM cells.This brief proposes a near-Vth9T SRAM cell implemented in a 22-nm FinFET technology. The read buffer of the proposed cell ensures read stability by decoupling the stored node from the read bit-line and improves read performance using a one-transistor read path. Energy and standby power are reduced by liminating the sub-V leakage current in the read buffer.

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