Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology
Product Description
Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology
Abstract—Although near-threshold voltage (NTV) operation is an attractive means of achieving high energy efficiency, it can degrade the circuit stability of static random access memory (SRAM) cells. < final year projects >
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