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A Short-Channel-Effect-Degraded Noise Margin Model for Junctionless Double-Gate MOSFET Working on Subthreshold CMOS Logic Gates
Abstract— Based on the device and equivalent transistor model, we present a short-channel-effect (SCE)-degraded noise margin (NM) model for junctionless double-gate MOSFET working on subthreshold CMOS logic gate. < final year projects >
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