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Home / programming language / Online Matlab Projects / New Approach to VLSI Buffer Modeling, Considering Overshooting Effect
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New Approach to VLSI Buffer Modeling, Considering Overshooting Effect

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SKU: PROJ1760 Categories: 2013 Projects, 2014 Projects, Final Year Projects, Online Matlab Projects, Parallel and Distributed Projects Tags: academic projects, Android project 2013-2014, Android project Abstract, Android project list, btech projects, dotnet project 2013-2014, dotnet project Abstract, dotnet project list, Final Year Projects, ieee abstracts, ieee paper download, ieee projects 2013, ieee projects 2013 paper list, ieee projects 2013-2014, ieee projects 2014, ieee projects 2014 paper list, ieee projects 2015, ieee projects 2015 paper list., ieee titles, java project list, java projects 2013-2014, java projects Abstract, madurai software company, matlab project 2013-2014, matlab project Abstract, matlab project list, mtech projects, phd research work, Php project 2013-2014, Php project Abstract, Php project list, Power Electronic project 2013-2014, Power Electronic project Abstract, Power Electronic project list, project center Bangalore, project center chennai, project center coimbatore, project center Erode, project center Hyderabad, project center Kollam, project center madurai, project center Pandicherry, project center ramnad, project center Salem, project center Tiruneveli, project center trichy, research center, Students Projects, Vlsi project 2013-2014, Vlsi project Abstract, Vlsi project list
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New Approach to VLSI Buffer Modeling, Considering Overshooting Effect

Abstract—New Approach to VLSI Buffer Modeling, Considering Overshooting Effect. we use the alpha power law model for MOS devices to reach a more accurate modeling of CMOS buffers in very deep submicrometer technologies. We derive alpha model parameters of a CMOS buffer for 90-, 65-, and 45-nm technologies using HSPICE simulations. By analytical efforts we find the output resistance of a minimum-size buffer and compare it with those extracted from HSPICE simulations. We propose a new model for the output resistance of a given-size buffer in any technology, which demonstrates 3% error on average as opposed to the conventional model. Also a new buffer resistance is proposed analytically and numerically < Final Year Projects > to calculate the crosstalk for interconnect analysis applications. In addition, we propose a model for the transfer function zero generated by the gate-drain capacitances of MOS transistors, which cause the overshooting effect, and develop an accurate expression for modeling this phenomenon. As the final point, together with the input-to-output capacitance, the equivalent output resistors present a simple and accurate macromodel for the CMOS buffer.

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