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  • A Low Area Overhead NBTI/PBTI Sensor for SRAM Memories

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    A Low Area Overhead NBTI/PBTI Sensor for SRAM Memories Abstract-Bias temperature instability (BTI) is known as one serious reliability concern in nanoscale technologies. BTI gradually increases the absolute value of threshold voltage (Vth) of MOS transistors. The main consequence of Vth shift of the SRAM cell transistors is the static noise margin (SNM) degradation. The…

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